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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER ANG CH Collector-base voltage IN Collector-emitter voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 500 5 3.5 UNIT V V V A W ae ae Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1893 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 500 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=3A; IB=0.6A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 50 |I A IEBO Emitter cut-off current VEB=5V; IC=0 50 |I A hFE DC current gain fT COB Transition frequency Collector output capacitance ANG CH IC=1A ; VCE=5V 10 40 IC=0.1A ; VCE=10V IN EMIC ES IE=0; VCB=10V;f=1MHz DUC ON 3 95 TOR MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1893 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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